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SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS
ISSUE 3 - FEBRUARY 1996 COMPLEMENTARY TYPE - 7 BCX51 - BCX54 BCX52 - BCX55 BCX53 - BCX56 BCX53 - AH BCX53-10 - AK BCX53-16 - AL
BCX51 BCX52 BCX53
C
PARTMARKING DETAILS - BCX51 - AA BCX51-10 - AC BCX51-16 - AD BCX52 - AE BCX52-10 - AG BCX52-16 - AM E C B
SOT89 SYMBOL V CBO V CEO V EBO I CM IC P tot T j:T stg BCX51 -45 -45 BCX52 -60 -60 -5 -1.5 -1 1 -65 to +150 BCX53 -100 -80 UNIT V V V A A W C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at T amb=25C Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage BCX53 BCX52 BCX51 SYMBOL V (BR)CBO MIN. -100 -60 -45 -80 -60 -45 -5 -0.1 -20 -20 -0.5 -1.0 25 40 25 63 100 150 25 TYP. MAX. UNIT CONDITIONS. V V V V I C =-100A I C =-100A I C =-100A I C =-10mA* I C =-10mA* I C =-10mA* I E =-10A V CB =-30V V CB =-30V, T amb =150C V EB =-4V I C =-500mA, I B =-50mA* I C =-500mA, V CE =-2V* IC IC IC IC IC MHz pF =-5mA, V CE =-2V* =-150mA, V CE =-2V* =-500mA, V CE =-2V* =-150mA, V CE =-2V* =-150mA, V CE =-2V*
Collector-Emitter BCX53 Breakdown BCX52 Voltage BCX51 Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio
V (BR)CEO
V (BR)EBO I CBO I EBO V CE(sat) V BE(on) h FE -10 -16
V A A nA V V
250 160 250
Transition Frequency Output Capacitance
fT C obo
I C =-50mA, V CE =-10V, f=100MHz V CB =-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%
3 - 34

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